Research On Preparation And Properties Of ITO Films

ITO thin films can be said as a new type of material is widely used in many areas, It's excellent properties has aroused the concern and research of national experts. Transparent conductive oxide thin-film research and development and utilization of the optoelectronic devices field has been a research focus.The most current research and application of TCO thin film is ITO(Tin-dope indium oxide) film. ITO thin film has many outstanding features,such as Visible light transmittance of more than 83%,Infrared reflectivity is 80% of more than, UV absorption rate of more than 85%, Resistance rates of 10-3-10-4? . cm range, Energy gap in the range of 3.6-3.9 eV, in addition, ITO thin film also has a high hardness, wear resistance, chemical corrosion, as well as easily etched into a certain shape, and many other advantages of the electrode graphics, This makes the ITO films are widely used in Various fields.ITO thin films are prepared by direct current pulse magnetron sputtering (DCPMS) at room temperature. We have studied the influence of deposition pressure, sputtering power, and O₂ flux on the growth rate and electrical-optical properties of deposited films by using Stylus profilometer, four-point probe sheet resistance measurement, and Ultraviolet-visible spectrophotometer. The results indicate that the deposition rate of ITO thin films decreases and increases with increasing deposition pressures and with increasing sputtering powers, respectively. The sheet resistances of ITO films increase and decrease with increasing deposition pressures and with increasing sputtering powers, respectively. The transmittance of ITO films is mainly affected by O₂ flux. The sheet resistance is 24?/â–¡and the transmittance is 84.1% when the deposition pressure, Ar/O₂, and sputtering power is 0.5Pa, 20:0, and 250W, respectively.Study the annealed ITO thin films: Lower O₂ flow in the ITO films were prepared in annealing, 220℃, after 20mins annealing, ITO film sheet resistance of the largest rate of decline, can greatly increase the film conductivity; in the higher O₂ flow of ITO films prepared under annealing, the annealing at 400℃10mins resistivity of films decreased after the maximum, increase the film conductivity.