Electromagnetic Performance Research Of Silicon-based Integrated Inductors

The integrated inductor, as one of the key elements in RF IC, has been widely used in RF circuit models currently. With the development of deep sub-micron technology and increasing working-frequency, as traditional silicon-based spiral inductors have instability reflection parameters, bad direction of electromagnetic radiation, and other high-frequency electromagnetic problems, which lead to high-frequency inductor parameters's missing in the design menu. In addition, traditional silicon-based spiral inductors have small quality factor, small inductance value, large electromagnetic radiation, large power loss, etc., which have become the physical design's bottleneck, and restrained the development of IC. Aiming at the above problems, firstly using the Finite Element Method, modeled and simulated the traditional silicon-based spiral inductors'high-frequency electromagnetics in this paper, the high-frequency electromagnetic field characteristics of which were received, and maked up for the inductors'high-frequency electromagnetic parameters'missing problems in the traditional design menu. Secondly a new type of silicon-based suspended integrated inductors with suspended structure was proposed on the basis of the traditional silicon-based spiral inductors, through simulating and proven with the high-frequency electromagnetic software that the suspended silicon-based integrated inductors have smaller electromagnetic radiation during the experiment, lower power loss, smaller coupling, larger inductance values than the traditional silicon-based spiral inductors, which have better performances than traditional silicon-based spiral inductors. Finally, according to the high-frequency electromagnetic simulation results the parameters were extracted, and on the basis of the lumped equivalent circuit model for the inductor, the coupling capacitance was added, the high-frequency equivalent circuit model for the silicon-based integrated inductor was modeled, which provided a reliable simulation model for the high-frequency circuit simulation.The introduced method for characterizing the electromagnetic of silicon-based integrated inductors is found to be accurately and rapidly as well, which can be used to analyze and design the silicon-based integrated inductors, and will be important for designing the IC and optimizing the layout in high-frequency.