Study On Growth Of Two-terminal Monolithic GaInP₂/GaAs/Ge Tandem Solar Cell By MOCVD

Super performance solar cells are increasingly of great need with the rapid development of space technology. Great attention has been focused on the multi- junction photovoltaic cells based on GaAs and InP materials, especially the GaInP, /GaAs/Ge tandem cells. The very cells have the potential of achieving solar energy conversion efficiencies in excess of 34% and have been realized near 30% efficient recently in laboratory. So far GaInP-, /GaAs/Ge tandem cells have becoming one of the most potential cells for space application. However, the research by domestic scholars on GaInP,/GaAs/Ge cells is in the preliminary period. And the relevant intensive reports have not been found yet. In this thesis we reported details of the growth of GaInP2 /GaAs/Ge tandem cells by MOCVD technology and fabrication of the devices. Firstly, research and development of GaInP2 /GaAs tandem cells (GaAs or Ge substrate) in foreign countries were presented. Secondly, the direct current model of solar cell was used to analyse the I-V output feature of tandem cell. Then the design of GaInP2/GaAs/Ge tandem cell for its structure and parameter was discussed. After that, the detailed aspects of growth of the monolithic cascade cell by home-made low pressure MOCVD was studied. Finally, the cell fabrication processing was described. From the test results, significant progress on the performance of the tandem cell was attained. The research work of this paper is the first systemic one in our country. It will be helpful to advance the growth and fabrication of GaInP-,/GaAs/Ge tandem cells to some extent.