Study Of Deposition Rat And IR Analysis Of A-Si:H Film Prepared By MWECR CVD

The difference between amorphous silicon (a-Si) and crystal silicon(c-Si) on structure, made a-Si has special optical and electronic characteristics. So it had huge prospect of application. But there are a lot of defects (dangling band) in amorphous silicon, therefore its application have been limited. To hydrogenated amorphous silicon (a-Si:H), however, it has much less defects than non-hydrogenated a-Si, for the sake of much hydrogen which eliminate the defects by making a bond with non-connected Si bond. With these virtue, a-Si:H accord with device quality. The films of a-Si:H have widely used in solar cell, film transistor and flat display. But the deposition rate and quality of a-Si:H was primarily affected by preparation methods. Recently, the microwave electron cyclotron resonance (MWECR) CVD method was weightily studied. In view of its virtue of high degree of electron and ion generations, MWECR CVD method is expected to deposit device quality a-Si:H at high deposition rate. Thus, we have prepared a-Si:H films under diverse conditions using MWECR CVD.The mechanism of affecting the deposition rate of a-Si:H, was very perplexing, and had close relation with preparing methods. We studied the relationship of pressure, flux of SiH4 and substrate temperature with deposition rate of a-Si:H films. On the same time, in order to gain high deposition rate and fine uniformity a-Si:H films, we transformed the magnetic configuration to mirror magnetic field by. We studied the effect of mirror magnetic field to deposition rate and homogeneity in large area, moreover, gained large-area homogeneous films at high deposition rate.The photoelectric property of a-Si:H films is closely associated with hydrogen content in films. The Fourier transform infrared (FTIR) spectrum is an effective technology for studying the hydrogen content (CH) and the silicon-hydrogen bonding configuration (Si-Hn) of hudrogenated amorphous silicon (a-Si:H) films. In the paper, CH and Si-Hn of a-Si:H films, fabricated at different ratio of H2/SiH4 by microwaveelectron cyclotron resonance plasma chemical vapor (WMECR CVD) method, have been obtained by analyzing their FTIR spectra that are treated by baseline fitting and Gaussian function fitting. The effects of ratio of H2/SiH4 on CH and Si-Hn are studied.