| High energy proton, neutron, alpha particle can cause Single Event Effects in semiconductor device used in aircraft electronic system, which affects the reliability and lifetime of an aircraft. In the process of hardening the electronic component and especially the processor used in space, we need a way to simulate radiation effect of a circuit. Howerer, the widely used method nowadays is the device-level numerical simulation, which restricts the scale of evaluable object seriously. The technique of simulating Single Event Effect at circuit-level is the problem which must be solved in radiation hardening.The mechanism of Single Event Effect is studied in this thesis. Based on theoretical calculation and mathematical analyse, an evalution method of Single Event Effect in circuit-level is concluded. It makes the balance between precision and time cost. The practicability of this method is verified by comparing datas with what is resulted by other methods in reference literatures. The main contributions in this thesis are as follows:1. Messenger classical Double Exponential Model is modified by adding a factor of which fit the description of transient current pulse more exactly.2. The 3D device numerical simulation of Single Event Effect is performed using DESSIS. The parameters of the improved Double Exponential Model are confirmed by numerical optimization of simulation results and the expression describing the relationship between the transient current pulse and Linear Energy Transfer (LET) is concluded.3. Simulating SEU of an unhardened memory cell using this method in circuit-level, we gained that the critical LET is 0.49 MeV.mg-1.cm2 and which is in accordance with the result in reference literature: between 0.3 and 0.7 MeV.mg-1.cm2.4. By simulating SEU of 7 hardened memeory cell posed previously and comparing their tolerance to SEU, performance, area and power, 3 cells are chosen to test, which are suitable to be used in the cache of the processor in space application. |
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