| As a new large gap semiconductor material, ZnO attracts more and more attentions in recent years. ZnO has large large direct band gap of 3.37eV, and large exciton binding energy of 60meV at room temperature which provides an attractive prospect to highly efficient UV light emitters, light emitting diodes (LEDs). ZnO thin film is used widely and effectively in the fields of surface acoustic wave devices, planar optical waveguides, transparent electrodes, ultraviolet photo-detectors, piezoelectric devices, UV light emitting diodes and laser diodes, gas sensors and so on.There are many technique methods to be used to deposit ZnO films, such as magnetron sputtering, pulsed laser deposition(PLD), metal organic chemical vapor deposition(MOCVD), molecular beam epitaxy(MBE), spray pyrolysis and sol-gel process. MOCVD is of particular importance for producing high quality films over large areas in a manufacturing mode for it can prepare of high quality films, control uniform source volume and achieve rapid, large-area, multi-chip at the same time.In this paper the Ga doped ZnO transparent conducting films was prepared by MOCVD. Studied the influence of experimental parameters on structure, electrical properties and transparent of the samples by X-ray diffraction, Hall effect, transmission spectra.(1) Studied the influence of temperature on structure, electrical properties and transparent of the ZnO:Ga film.(2) Studied the influence of TMGa flux on structure, electrical properties and transparent of the ZnO:Ga film.(3) Studied the influence of oxygen flux on structure, electrical properties and transparent of the ZnO:Ga film.high- transparence , low-resistivity ZnO transparent conductive film with average transmittance of 80%, sheet resistance of 18.28ohm/ cm3 and resistivity lower than 9.2×10-4O·cm can be achieved.
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