The Study On Characteristics Of ZnO Nano Materials Prepared By Magnetron Sputtering And Solid-phase Reaction

ZnO is an wide band gap compound semiconductor with wurtzite structure anddirect band gap. The band gap is3.37eV and the exciton binding energy is60meV.ZnO have broad application prospects in the ultraviolet light-emitting diode, triode,thin film transistor, uv detector, dilute magnetic semiconductor, photovoltaic devices,solar cell and other fields. Besides, producing the film is rich in raw materials,preparation technology is mature, and thus effectively control the cost of production,low cost, and with high stability. As the reason of the economic fabrication andflexibility of the substrate, the dye-sensitized solar cells (DSSCs) has attracted manyinterests. ZnO was one of the rst metal oxides used in dye-sensitized solar cells(DSCs).This paper adopts the the reactive radio frequency magnetron sputteringdeposition where the ZnO films were prepared by sputtering the ZnO target.Theprocess parameters including temperature, gas flow ratio, and the samplesubstrate.Through systematic study of the process parameters to obtain the synthesisof zinc oxide thin film law, we analyze the properties of ZnO films studiedcorrespondence between the synthesis and properties of the thin film structure. Thethin films was characterized by using X-ray diffraction (XRD), Atomic forcemicroscopy (AFM). Then study the light-emitting properties of the film method usesphotoluminescence. Experiments show that the preparation of nanocrystalline ZnOpresent a good c axis preferred orientation growth. Magnetron sputtering process hasthe important influence of temperature on the ZnO thin film crystallinity, oxygen,argon than the deviation of the preparation of1film has good crystallinity, crystalproperties of substrate for Al2O3film is better.Then using solid-phase reaction method, experiment with reaction temperature as parameters, photoluminescence method was used to study the luminescence propertiesof samples and X-ray diffraction of samples structure is analyzed and tested.Experiments show that, as fluid temperature is located at395nm uv emission peakgradually red shift, red shift phenomenon showed obvious quantum size effect, it alsosuggests that nanometer ZnO crystal grew up gradually. With the increase ofpreparation temperature, crystalline ZnO diffraction peak gradually increased andmore and more narrow show samples increase nanocrystalline ZnO composition andparticle size increase gradually Amorphous ZnO gradually to the transformation ofnanocrystalline ZnO.Finally using method of solid-phase reaction in200℃should be in the synthesisof ZnO nanoparticles and commercial ZnO by surgical incision besmear is onconductive glass FTO, burn into porous ZnO electrode. Anode materials wereprepared with ZnO as light, N719dye, I/I3-electrolyte system,Pt as a counterelectrode and encapsulation dye-sensitised solar cells. Solid-phase reaction method ofthe preparation of ZnO cell efficiency (PCE) is1.938%; Commercial preparation ofZnO cells efficiency (PCE) of0.194%. Can draw their solid-phase reaction of ZnOnanomaterials preparation of photoelectric conversion efficiency of solar cell is10times. than normal commercial material preparation of solar battery.