-doped Doped Waveguide Film Preparation Process And Its Characteristics

With the development of optical communication and integrated optoelectronics,Er3+-doped optical wave-guide amplifier (EDWA) becomes the hotspot in the field of optical fiber communication and optoelectronics. However the development of Er3+-doped optical wave-guide amplifier (EDWA) requires the preparation of optical wave-guide film.This thesis detailed discusses the preparation of Er3+-Al2O3 wave-guide film with ion-beam-enhanced-deposition (IBED) technology and the preparation of Er3+-SiO2,Er3+-TiO2,Er3+-SiO2/TiO2 film and glass with sol-gel technology.The component of the films fabricated with IBED techniques were examined by RBS,XPS and EDX. The indexes of Er3+-Al2O3 films determined were 1.64-1.70. Propagation loss of 0.56dB/cm was obtained at 632nm. The optical property of Er3+-Al2O3 films characterized by Photoluminescence spectroscopy..We also measured the indexes of the Er3+-SiO2,Er3+-TiO2,Er3+-SiO2/TiO2 film prepared with sol-gel techniques. The glass fabricated with sol-gel techniques was analyzed with FTIR and absorption spectroscopy.The relationship between optical function and technologies of IBED and sol-gel was summarized.