| In this paper, several thin films samples of Vanadium oxide were got by high-frequency Magnetron sputter with pure metal vanadium as sputter source. During sputtering , when Ar and O2 proportion rate changed ,the properties of sample was changed too. On the certain condition, the resistance of thin film appear max value. TCR (Temperature Coefficient of Resistance) of the sample was measured. The measurement results showed that the TCR of the thin film which resistance range was under 45-60KΩ was larger than that which resistance under 15-25KΩ.At last the XPS was used to analyze the composition of the films.The micro-bridge structure in uncooled infrared focal plane arrays was designed. The device was fabricated by micro-machine technology. Micro-bridge was used Si3N4. The sacrifice layer can wipe off by PECVD. |
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