Preperation Of Diacetone Acrylamide Modified Methylacrylate Photoresist

Photoresist is the key basic chemical materials of microfabrication technology in electronic information industry; the development of the matrix resin is the basis for improvement of photoresist.Traditional methacrylate resist is limited in high-precision circuit board because of it’s disadvantages, such as low resolution, brittle, thick viscocity, etc. So, it’s of great practical significance to synthesis resins that can overcome these shortcomings. In this paper, we take methyl acrylic acid (MAA), methyl methacrylate (MMA), butyl acrylate (BA) and diacetone acrylamide (DAAM) as raw materials, synthesized a diacetone acrylamide modified methyl acrylate resin by free radical polymerization, it was prepared into photoresist, the result show that it can effectively improve the traditional optical methacrylate photoresist in resolution, brittle and viscosity. The main contents of this papar are as follows:1. This paper synthesized a series of methacrylate resin by solution free radical polymerization, discussed the impact of synthesis condition on molecular weight and molecular weight distribution of matrix resin, from initiator and initiator content, feeding method, reaction temperature, reaction time, monomer ratio aspect; then, this article chose DAAM as modifier, synthesized DAAM modified methacrylate resin, discussed the performance of DAAM modified methacrylate resin. The results show that, with azobisisobutyronitrile (AIBN) as initiator, under conditions that the content of AIBN to monomer is0.6～1%in quality, reaction temperature is80～85℃, monomer mass ratio (MAA:MMA:BA) is25:50:25, DAAM content is5～10%, and several times feeding, the polymer average molecular weight is large, the molecular weight distribution is narrow,and resolution and adhesion of the modified resin were improved.2. Prepared photoresist with the resin synthesized in laboratory as matrix resin, analysised the effect of matrix resin, photoinitiator, photoinitiator content, crosslinking monomer ratio and crosslinker content on photosensitivity of phtotoresist. The results show that, photosensitivity of phtotoresist was improved by DAAM modifing. The photosensitivity is better on the condition that the photoinitiator (HABI) content is6.5%to the resin in quality, crosslinking monomer ratio (TMPTA:HDDA) is3:2, crosslinker content is25%to the resin in quality.3. For samples prepared under the optimal conditions above, the impact of lithography process on quality of resist pattern was discussed, from prebake, exposure, development and postbake process. The results show that at conditions of the lithography process:prebaking80℃、15min, exposure10s, developing40s, post baking100℃,20min, lines of the resist pattern obtained are straight and clear on border, the resist patterns show good adhesion and high resolution.