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Preparation Of SnO2Nanostructures By Magnetron Sputteringand Thermal Evaporation Method

Posted on:2014-01-18Degree:MasterType:Thesis
Country:ChinaCandidate:X S ZhangFull Text:PDF
GTID:2231330398458498Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Tin oxide (Sn02) is a white cornered crystal existing widelyin the nature, with78g/cm3densit,1100℃melting pointy.Its chemical properties is stable, insoluble inwater, dilute acid and dilute alkali but soluble in sulfuric acid.In industry, it can beused in the manufacture of opaque glass, porcelain uranium and glass polishing agent,etc.Although Sn02is the insulatoron purely stoichiometric, but tin is Ⅳ groupelement,and often produces oxygen vacancy caused by a lack of oxygen inpreparation of tin dioxide material, so the resistance will be very high and shows thecharacter of the N type semiconductor.With the continuous development of nanotechnology, nanometer materialsgradually become an important subject in the areas of science and technology.Becausenanomaterials is between macro and micro metastable substances between atoms ormolecules, they no only have significant quantum size effect, surface and interfaceeffect, small size effect and macroscopic quantum tunneling effect that traditionalsolid material do not have, but also have some exotic features in the mechanical,electrical, magnetic, optical, thermal and chemical properties and.Except this two reasons, tin dioxide nano material also has special crystalstructure, large specific surface area, high surface activity and adsorptioncharacteristics. people pay a great deal of attention on it, especially its hightransparency on the part spectrum of visible light and high sensitivity to somespecial gases. The tin dioxide nano materialthe play an important role in photoelectricdevices and sensorsIn this paper, we using Sn as raw material, with magnetron sputtering and thermalevaporation method,synthetize different SnO2nanostructures, including tin oxide nano wire and tin oxide nanoparticles. With scanning electron microscope (SEM),transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersiveX-ray spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR), Ramanspectroscopy (Raman), and other test methods,wo characterized differentmorphology of the production. after analysis of the structure of synthesis,we findthat all tin oxide nanostructures are rutile structure.We discussed tin oxide nanomaterials growth mechanism by the result of thefurther experiments Research shows that synthesis of nanostructures are followVL S growth mechanism, in the other word mechanism of gas-liquid–solid. hefocus of our research is in the process of tin oxide nanomaterials growth of differentfactors on the morphology of tin oxide nanostructures role.My paper has several parts as follow:The first chapter mainly is overview of the study of tin oxidenanomaterials,including the introduction of tin oxide as basic properties ofsemiconductor materials and special properties of tin oxide nano materials; we alsostate preparation of tin dioxide1d nanostructures at home, abroad and research status.At last the selected topic basis and the research direction is given.The second chapter is the experiment exploration stage. First we explored the bestcondition of preparation of high purity tin dioxide nano materialsthe tin powder usingraw material by thermal evaporation. First according to the data we will set tindioxide annealing temperature in the range of800-1000degrees Celsius; Secondly inorder to explore annealing time in the reaction, we will set respectively the influenceof the annealing time at20min,40min,60min,80min; Finally we study Aucatalysts of silicon substrate to tin oxide nanostructure morphology, and on this basisto explore the function of a small amount of carbon mixed in the tin source in tindioxide nano structure, and according to the results of experimental to analysisroles of different catalysts. Through the research we found in that pure tin sourceresponse,the best condition of preparation of tin dioxide nanowire is using splashed gold silicon substrate,annealing60min in900℃. With tin doped carbon source, thebest condition of preparation of tin dioxide nanoparticles needed substrate with gold,the1000℃annealing temperature, and the80min annealing time.And then in the third chapter is studing of the best conditions of tin oxidenanowires and nanoparticles by using modern analysis methods.Chapter four we discussed the SnO2nanostructure growth mechanism,applicationof preparation of SnO2nanometer material and the prospect analysis of reality. Intheory, we explain the growth of tin dioxide mechanism, argument VSL mechanismsunder different experimental conditions, and point out improvement direction in thefurture experimental conditions.The fifth chapter summarizes this thesis. First of all I sum up the research resultsduring the period of my graduatestudents In addition I put forward specificproposals for the future tin oxide nanomaterials research.
Keywords/Search Tags:one dimensional SnO2nano structure, thermal evaporation, Magnetronsputtering, Growth mechanism
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