Preparation Of One-dimensional Silicon-based Micro/nanomaterials-SiO₂?SiC And Photoluminescence Properties

In the past two decades,material preparation technology has developed rapidly,especially in the field of nanoscience and technology,creating a new world of material preparation.It is predicted that the fourth industrial revolution of mankind may be born in nanotechnology,renewable energy technology,quantum information or genetic engineering technology.At the same time,nanomaterials are the most important research object in the field of materials.The nano-SiO₂studied in this paper is one of the common silicon-based materials,and is a very important basic material in the field of optoelectronic devices and optics because of its unique and excellent physical and chemical properties.Therefore,the preparation technology of nano-SiO₂and its optical properties are of great significance.In this paper,SiO₂microwires grown in parallel with Si O as raw materials were prepared by thermal evaporation method?physical vapor deposition method?and SiO₂microspheres were prepared using Eu₂O₃as reducing agent.SiO₂was used as raw material and C was used as reducing agent to prepare Si C.Micro and nano materials.The growth mechanism and luminescence properties of the experimental samples were studied.The basic structure and optical characteristics of the experimental samples were analyzed by SEM,EDX,XRD,RAMAN,and PL.Detailed structural characterization confirmed that the parallel SiO₂microwires obtained had a hexagonal structure,and a small amount of amorphous Si was synthesized during the preparation process.The growth of parallel SiO₂microwires is likely to be controlled by the VS mechanism under the influence of carrier gas flow rate and direction.Photoluminescence results show that Si-embedded parallel SiO₂microwire products have unique optical properties.Unlike traditional ordinary SiO₂micro-nano materials,parallel SiO₂nanowires embedded in amorphous Si clusters show a wide emission centered at 2.1 e V?588 nm?.The diameter of nanowires of Si C micro-nano materials is about 15-25 nm,and the diameter of nano-flowers is about 1?m.The growth mechanism of Si C micro-nano materials is VLS mode.It has an obvious emission peak at 575 nm,and the emission peak may originate from the amorphous Si C formed during the growth of the sample.Using E₂O₃and Si O as reaction sources,Eu³⁺-doped SiO₂microspheres were prepared.The structure of the microsphere is a tetragonal crystal phase.The diameter range of microspheres is about 2?5?m,and the diameter decreases gradually with increasing temperature.The PL spectrum test results show that the luminescence of the microsphere sample mainly comes from the electric dipole transition of Eu³⁺ions.