The Semiconductor Bridge Initiators Electrostatic Damage And Theoretical Modeling

In this thesis, the characteristics of semiconductor bridge initiator with and without electrostatic discharge are analyzed by investigating the resistance fluctuation, I-V curve character, ignition voltage and critical exploding current. Also, the electrostatic interactions between the leg and shell of semiconductor bridge are simulated by the EM simulation software "Ansoft Maxwell". The details of this thesis are shown as the followings:(1) The effect of electrostatic on the typical semiconductor bridge(TSCB) initiator were studied. The typical semiconductor bridge initiator can tolerate the electrostatic interaction of National Military Standard (25kV,500pF,50000). Although the TSCB was passivated by the electrostatic discharge, the safety of TSCB wasn’t diminished. The features of TSCB with ESD concluded that:compared with the bare bridge, SCB which suffered ESD have the higher whole ignition voltage, the ignition power and the current peak. Meanwhile the safe current changed little. These didn’t vary with the different explosives and structures of charge. The TSCB which suffered the ESD of National Military Standard showed minor resistance.(2) The influence of electrostatic on micro-scale semiconductor bridge (MSCB) initiator were investigated. The MSCB which suffered ESD became inert. When the electrostatic voltage reached as high as13kV, the performance of MSCB became worse. With the increasing of electrostatic voltage, the resistance of MSCB increased and the slope of I-V curve gradually decreased. All these changes were related with the shape of bridge, the dopant density and the negative resistance effect of chip.(3) When the electrostatic voltage was25kV, the electrostatic interaction between the leg and shell of TSCB was simulated. The simulation showed that the voltage around the two leg wires was higher than other areas and the gap between leg wires and shell, the gap between solder points and shell and the gap between solder points and the bottom of casingcan easily be broken down by electrostatic. Meanwhile the simulation of bridge area showed that there was no voltage, electric field strength, dielectric density and energy distribution in bridge area.(4) The circuit simulation was explored and the method about how to build semiconductor bridge model was put forward with the software "PSPICE". It is a meaningful beginning for the electrostatic protection of semiconductor bridge explosive devices...