Prepared By Electrodeposition Znse Film And Structural Characterization Of Research

ZnSe is a wide band gap (2.7eV) semiconducting material, which finds app-lic ation as a promising material for the optical devices in the short wavelength region. Also it has been identified as a window material in he-tero-junctionsolar cells, res ulting in a higher efficiency by means of admissionof more photons to the absorber layer, whichfinds application in the area of PEC solar cell devices also.This literary grace electricity deposit for preparation of ZnSe film, in ZnSO4and SeO2acidic aqueous solution to ITO conductive glass as the cathode (working electrode), the constant potential method deposit ZnSe film, by changing the experimental parameters such as ion concentration and pH value, temperature, electric deposition potential parameters determine the best experimental parameters:Zn/SeO3concentration ratio is500/3, deposition potential for-850mv, pH=2.4, the reaction of the optimum temperature35℃, deposition time for15min, at the same time also explore the chelating agent to join and stirring on electrodeposition effect. ZnSe to film XRD, SEM and UV-VIS and structure characterization and testing, through XRD sure (111)(220)(311) place three characteristic peak, through the SEM image can see deposit results, through the UV-VIS determine its passing rate at70%, and analyzes the ZnSe of electrodeposition process and influencing factors.