Study Of High Voltage High Power IGBT Gate Drive And Protection Circuits

Nowadays, the converters based on IGBT are widely used in industrial motordrives, renewable energy generation, power transmission, power conversion, powerquality control and reactive power compensation and other fields and graduallydominate in medium-high power applications. Drive and protection circuitperformance directly affects the performance and safety of IGBT and converteroperation.Based on the detailed analysis of IGBT operation, the technology of gate driveand protection circuit commonly used in high-voltage high power IGBT is analyzed,compared and summarized. For the insufficient driving peak current and power, afteranalysis of advantages and disadvantages and scope application of the conventionalmethod that driver plus push-pull amplifier circuit and isolation power, this paperproposed dual-channel parallelling of the driver to provide a double driving powerand driving peak current and increase driving capability, and verified the validity ofthe idea by Pspice simulation and experiment.The drive and protection circuits of3300V/3000A large capacity Whole Wafer IGBT are developed using2SC0535dual-channel parallel design. Meanwhile, the drive and protection circuit ofbidirectional power module used in matrix converter are analysised, summarized anddesigned. The main works are as follows:First the IGBT structure, model, static characteristics, combined with thetheoretical formula is introduced in this paper.The effect of drive parameters on theIGBT’s switching characteristics in the switching process is then analyzed. By furtherresearching of the safe operating area, thus we have a deeper understanding on thefailure mechanism of IGBT.Secondly, based on in-depth study of the basic requirements of IGBT gate drive,the basic principles and design methods of each part of the driving circuit, areanalyzed, compared and summarized. For the special drive requirements ofhigh-voltage high-power IGBT, through comparative study proposed a dual-channelparallel to design the entire wafer large-capacity high-voltage IGBT drive circuits,simulation and experimental results verified the validity of the design method.Thirdly, detailed analysis of the protection circuit requirements for high-voltagehigh-power IGBT is summarized. The advantages and disadvantages and scope application of common design methods to dv/dt, overvoltage, overcurrent protectioncircuit are discussed; A more complete protection circuit is designed for the WholeWafer large-capacity high-voltage IGBT. Testing experimental results verified thevalidity of the design.Finally, the bidirectional power module used in matrix converter are classified.On the basis of their characteristics and its drive and protection circuit designchallenges are summarized, regarding RB-IGBT anti-parallel combination ofbidirectional switch, when using conventional high-voltage fast recovery diode todetect short-circuit current, protection circuit destroyed by revease high voltage, thusproposed a new detect method using resistor in series limit current.