Synthesis And Parameter Optimization Of Single-layer Graphene Based On CVD Method

Graphene has a unique crystal structure, due to its excellent physical and chemical properties, in the electronics and has a broad prospect of application in composite materials. The application of material performance is directly related to the material,playing to the excellent properties of graphene, the key lies in how to preparation of high quality graphene. This article is based on chemical vapor deposition method to carry out the research work, exploring the key growth parameters on the quality of the grapheme in the process of growth,testing the light transmittance of graphene and conductivity; Meanwhile,growth of graphene was prepared by a simple capacitor configuration pattern processing,exploring the graphene application feasibility in terms of functional devices.This paper studied graphene preparation technology on cooper substrate, explored the reaction temperature, concentration of carbon source, the reaction time on the influence of parameters on the growth of grapheme; We optimize reaction parameters, preparing the cm level surface uniformity of large area of graphene films. Through test, the graphene obtained has high light transmittance(92.7%-95.3%) and lower sheet resistance(152.2-326.3?/sq), ensuring the graphene in pervious to light and the comprehensive performance of conductive. The growth rhythm of graphene on copper foil is studied under the low pressure, the results showed that with the increase of temperature, the quality of graphene is high, but higher than 1000?, the promotion is no longer apparent; When the methane concentration is more than 35 sccm, generate the multilayer grapheme. With the decreasing concentration of methane, the quality of the film uniformity and increases, and when the concentration is less than 5sccm, the grapheme no film; with the increase of growth time, the surface uniformity of the graphene also will increase. According to the above conclusion, draw a trial on our equipment for the optimization of the parameters: Growth temperature 1000?, 35 sccm methane flow rate, hydrogen flow rate 10 sccm. In addition, the graphene can build successful structure by lithography, demonstrates the feasibility of graphene applications in functional devices.