Preparation And Properties Of CZTS Thin Film Solar Cells

CZTS?Cu₂ZnSnS₄?is a kind of four element compound,which is composed of four kinds of copper zinc tin sulfide.Because it has good light absorption ability,so it has a good application prospect as the absorbing layer material of solar cells.In this paper,CZTS thin films and CdS thin films were prepared,and the photoelectric properties of them are studied.In this paper,the preparation methods of CZTS thin film solar cells are explored and their photochemical properties are explored.The main contents are as follows:?1?Preparation of CZTS nano-powders.The CZTS powders were synthesized by hydrothermal method,with CuCl₂,ZnCl₂,SnCl₄ and CH₄N₂ S as raw material respectively,using deionized water as solvent under a certain temperature with stirring,and we obtained yellow clear solution,finally the dried powder did annealing treatment through the muffle furnace.The CZTS powders were prepared by hydrothermal method at different reaction temperatures,and then characterized by X-ray diffraction?XRD?,scanning electron microscopy?SEM?,ultraviolet visible?UV-Vis?and other equipment.The crystallinity and optical absorption properties of CZTS powders prepared at different temperatures were studied.?2?Preparation of absorption layer in CZTS thin film solar cells.The preparation of CZTS powder was prepared by grinding CZTS slurry,and then CZTS thin film was prepared by screen printing technology.The good CZTS film was got after a series of annealing treatment.The CZTS film were thoroughly characterized by SEM,UV-Vis and electrochemical workstation.It is found that these factors,annealing temperature of CZTS films and the degree of grinding of slurry abrasive,affect the light absorption rate and the optical conductivity of CZTS films.?3?Preparation of buffer layer?CdS?of CZTS solar thin film battery.The Cds were synthesized by water bath method,with NH₄ Cl,CH₄N₂S and CdCl₂ as raw material.The reaction conditions,PH and temperature,to prepare buffer layer were discussed.The CdS films were characterized by XRD,SEM,UV-Vis,electrochemical workstation.It is found that when the temperature of the reaction solution is about 70 degrees celsius and the solution pH value is 10,the film sample prepared after the annealing process has good crystallinity,good light transmittance and good photo conductivity.?4?In this paper,the P-N junction of CZTS and CdS thin film has been prepared.First a layer of uniform CdS thin films were deposited on the etched FTO glass,and then a layer of CZTS thin film was prepared by screen printing on cadmium sulfide thin film substrate,finally the carbon electrodes were printed on the CZTS film.The product was got after annealing treatment.With the 500 W xenon light source through the AM1.5 filter after the simulated sunlight irradiation to P-N junction,and some performance parameters of the battery were obtained by using the electrochemical workstation to test the P-N junction.