Preparation And Properties Of SiO₂ Nanomaterials

In today's information age,optoelectronic integrated devices play a very important role.At present,the development of silicon integrated process has been quite mature,so taking into account the process compatibility,the silicon-based materials as a light-emitting device will be the best choice,and its application is to improve the luminous efficiency.As one of the silicon-based materials,the unique physical and chemical properties of nano-SiO₂ have been widespread attention.Meanwhile,nano-SiO₂ is the most important basic material in the semiconductor industry,and it has a very broad perspective on the field of optical microscope,optical waveguide,nano optoelectronic devices.Therefore,it is of great significance to study the preparation and optical properties of nano-SiO₂.In this research,we selected a simple thermal evaporation method to prepare nano-SiO₂ with different morphologies and structures under argon conditions,such as crystal nanoparticles,amorphous nanowires,nanospheres and nano-network.We described and classified the basic structure,photoelectric properties and production process by a series of tests.During the experiment,no metal catalyst and toxic Si H4 or silicon substrate were involved in the reaction,thus avoiding the effects of single deposition and deep impurity,while also reducing environmental pollution.In addition,the different morphology of nano-SiO₂,optical performance defects are also very different.But on the whole,the formation mechanism of the product is vapor-solid mechanism,its diameter and length affected by the growth temperature.The study of nano-SiO₂ with different morphology is beneficial to the development of the performance,which is very helpful for the better application in electronic devices and new materials.