Preparation And Characterization Of TiAlN/CrAlN Nano-multilayers

In recent decades,the development of ceramic film coating is very rapid,because of its high hardness,high temperature,abrasion resistance and other properties are widely used in cutting tools and molds.The structure of TiAlN/CrAl N multilayers is a nanomultilayer formed by alternately depositing TiAl N and CrAlN films in the direction perpendicular to the substrate surface.TiAlN/CrAlN coating has high thermal stability,CrAlN has good oxidation resistance,making TiAlN/CrAlN film at 1000 ? still has a high hardness.Previous studies have focused on improving the hardness,high temperature resistance,oxidation resistance and thermal stability of TiAlN/CrAlN thin films,but there are few studies on the film structure and the interface of TiAlN/CrAlN thin films.TiAlN/CrAlN and TiN/AlN periodic thin films were prepared by magnetron sputtering method.The effect of modulation period on the crystal structure and film structure of TiAlN/CrAlN and TiN/AlN multilayers was studied.And the influences of Al target power,Ti/Cr flow,N2 flow rate,Ar flow rate and the sputtering rate,electron scattering length density and interface roughness of the negative bias film were investigated.The results show that TiAlN and CrAl N are face-centered cubic structures,and the change of the modulation period has no effect on the crystal structure of the films.Film growth is not complete,along the surface energy of the smallest(200)direction preferred growth.With the increase of the modulation period,the deviation of the thickness of the sputtered film and the thickness of the designed film increases,and the roughness increases the interface between the films.The Cr target has a fast construction speed and high energy,making the TiAl N film The roughness of the CrAlN film on the interface is greater than that of the TiAlN film on the interface of CrAlN.Al target power increases,the sputtering rate of the film increases,the electron scattering length density(SLD)of the Al atoms increases,and the bombarding effect of Al atoms on the substrate increases,and the roughness of the film increases.TiAlN film increases,the roughness of TiAl N film layer decreases,and the roughness of CrAlN film layer decreases.The N2 flow rate increases with the increase of TiAlN filmthickness and the increase of TiAlN film thickness.The Ar partial pressure decreases,the film thickness decreases,the roughness increases,the clarity of the film structure decreases;Ar flow rate increases,N2 partial pressure decreases,the film sputtering rate increases,SLD increases,the interface roughness decreases.The negative bias has obvious effect on the roughness,the effect on the sputtering rate is small,the negative bias increases,and the SLD increases slightly.TiN is a face-centered cubic structure,and AlN is a close-packed hexagonal structure.The interfacial structure of TiN/Al N nano-multilayers is clear,and there are multi-order diffraction peaks in the reflectivity curves.The results show that the interfacial diffusion is less and the roughness is lower than that of TiAl N/CrAl N multilayers.