Research On Silicon-Based Millimeter-Wave Switch And Power Integrated Circuits

Satellite Communications,remote radar sensing and imaging systems are continually evolving at a rapid speed toward high frequency and millimeterwave in order to achieve superior image resolution together with enhanced detection capabilities.Security sensors for detection of concealed weapons,imaging sensors for smart robots or non-destructive testing of Glass-Fiber-Reinforced Polymer?GFRP?structures are among many applications that can benefit from the nature of this valuable part of the frequency spectrum.As the system continues to grow toward low cost,miniaturization,and handheld operation,it requires the support of higher performance,less expensive millimeter wave modules,which promotes the development of the integrated circuit?IC?industry.Compared with traditional gallium arsenide,indium phosphide and other materials,Si Ge BiCMOS is not as good as these III-V materials in terms of linearity and efficiency,but its high characteristic frequenc,noise performance and heat dissipation performance are better than CMOS process is also doubtful.Moreover,silicon germanium has low manufacturing cost and is fully compatible with the silicon process.At the same time,the SiGe process can fully integrate the entire transceiver system of the millimeter-wave frequency band or terahertz frequency band into a single chip by virtue of its inherent advantages.Therefore,SiGe BiCMOS is a promising process that can be used for the development of high-frequency and even terahertz-band RF circuits.Based on the above premise,this paper uses IBM SiGe BiCMOS 8HP technology to design a Ka-band RF switch and F-band power amplifier.Among them,the RF switch adopts the improved series-parallel switch structure and uses inductance matching instead of series transistors to realize a single-pole/double-throw switch structure with less insertion loss and better linearity under the same isolation.In addition,the power amplifier uses a three-stage cascade structure to achieve higher gain.In order to reduce the Miller effect and improve the stability of the system,cascode structure is adopted,and the differential drive topology is used to double the output power in this power amplifier designed.The matching circuits use the transformer network,which not only satisfies the design specifications,but also significantly reduces the chip area.In this paper,the Ka-band single pole double throw switch?SPDT?circuit is designed and its layout simulation results can meet the design specification requirements.In the frequency band of 33³7 GHz,the insertion loss is less than 2.20 dB,the isolation is higher than 23.30 d B,and the P_1dB is greater than 17.86 dBm.The total area of the chip is 907?m×656?m,and the core area is 440?m×280?m.For the F-band power amplifier,the simulation results also meet the specification requirements.In the 110-140GHz operation band,the small-signal gain is greater than 18 d B,and return losses at input and output ports are all better than-5d B in the band.At the center frequency of 125 GHz,the amplifier achieves 14.5 dBm output power at the 1dB compression point,and the maximum power added efficiency?PAE?is 7.72%.The chip area is 705?m×360?m.