| Transparent conductive film is one of the most important components of many optoelectronic devices such as touch screens,flat panel displays,and solar cells.The manufacturing process of transparent conductive film directly affects the cost and efficiency of optoelectronic devices.Compared with physical methods such as vacuum evaporation and sputtering,sol-gel method has the advantages of simple operation,low cost,and large area preparation when it is used to prepare transparent conductive films,attracting more and more attention.However,the traditional sol-gel method for preparing transparent conductive films must be subjected to high temperature annealing to obtain good photoelectric properties,which greatly limits the application of this method in the field of flexible optoelectronics.To solve this problem,we used the self-combustion method combined with deep ultraviolet pulsed laser irradiation to effectively reduce the temperature of the thin films prepared by the sol-gel method.At the lower（200°C）annealing temperature,we obtained IZO transparent conductive film commercial whose optoelectronic properties are the same as commercial ITO.The main research contents are as follows:1、The influence of the annealing temperature and the ratio of In and Zn of the precursor solution on the crystal structure and the photoelectric properties was studied during the preparation of IZO thin film by self-combustion method.The variation of the resistivity of IZO films with the molar ratio of In and Zn in the films was obtained,and the optimized ratio of In and Zn was determined.The relationship between the exothermicity and weight loss of IZO film and the electrical properties of the film during the self-combustion reaction was investigated by thermogravimetry-differential thermal analysis.2、The influence of deep ultraviolet laser irradiation on the photoelectric properties of IZO thin films prepared by self-combustion method was studied.We studied the effects of deep UV laser irradiation on the photoelectric properties of IZO films treated with different In and Zn ratios and different annealing temperatures.It was found that UV laser irradiation can effectively improve the electrical conductivity of the films,and the conductivity can be increased by one order of magnitude when compared with the sample without laser irradiation.At the same time,the influence of the change of laser irradiation energy density on the crystallinity,surface morphology and photoelectric properties of IZO thin film was also studied.3、The mechanism of deep ultraviolet laser irradiation on IZO thin films was studied.Through FTIR analysis,we studied the effects of light and heat induced by deep UV pulsed laser irradiation on the removal of organic impurities and hydroxyl groups in IZO films.By comparing the XPS spectra of IZO before and after irradiation,the change of the chemical bond between metal and oxygen ions in the film after irradiation with deep ultraviolet laser was analyzed and its influence on the electrical properties was analyzed.Combining deep ultraviolet irradiation with self-combustion method,we successfully prepared an IZO film with a resistivity of 4.2×10-3?cm and a transmittance of 91.8%（at 550nm）under 200℃low temperature annealing conditions.It shows that this method can be applied to the preparation of large-area,flexible optoelectronic devices. |
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