The Preparation Of CuO And Its Study Of Resistive Switching

With the rapid development of integrated circuits,traditional Flash memory faces physical limitations,so it is urgent to find the next generation of non-volatile memory.It is considered to be one of the most promising non-volatile memory devices because of its simple structure,fast reading speed,low power consumption and compatibility with existing CMOS technology.Firstly,this paper studied the preparation of CuO film conditions by rf magnetron sputtering method,and the Cu oxide films were sputtering by different reaction conditions(The oxygen flows are 1sccm,2sccm,3sccm,4sccm,5sccm,6sccm,7sccm,9sccm,12 sccm,15sccm).The film was found to be copper oxide film when oxygen flows were 2sccm,3sccm,4sccm,5sccm,6sccm,and 7sccm.And the crystal structure was analyzed by X-ray diffraction instrument and atomic force microscope.It was found that when the oxygen flow was 5sccm,the quality of the film was the best.At the same time,we have studied the optical properties of CuO films,and found that the transmission of the film was the largest when the incident wave wavelength was 850 nm.Secondly,we studied the relationship between the crystal quality and the transmittance of the film under different sputtering pressures.It was found that the film with better crystallinity has a higher transmittance,and the film with poor crystallinity has a lower transmittance.Finally,we studied the effects of the electrodes(Cu,W)and the oxygen flows(2sccm,3sccm,4sccm,5sccm,6sccm,7sccm)on the device resistance performance.It can be found that the Cu/CuO/FTO devices have obvious bipolar characteristics when the oxygen flows are 3sccm and 4sccm,and they have good retention characteristics and cyclic stability.When W as the top electrode,W/CuO/FTO devices in the oxygen flows of 3sccm,4sccm,5sccm were found an obvious characteristics of bipolar and in the oxygen flows of 2sccm,3sccm and 4sccm have a good retention characteristics.However,the stability is worse than when Cu is the top electrode.At the same time,we studied the resistance characteristics of the device at low temperature and found that the device has a high switching ratio and shows good retention characteristics.