| The increasing speed of the development and update of high-tech products has placed higher requirements on the research and development rate of new materials.The traditional method of material research and development can be summed up as "trial and error method",that is,iterating sequentially through the method of "proposing hypotheses-experimental verification" to screen out target materials.This research and development method has a long cycle and cannot meet the needs of industrial development.The rise of materials genomics has provided new ideas and concepts for the development of new materials,accelerating the development process through high-throughput calculations,high-throughput experiments,and big data analysis.High-throughput experiments are a link between materials genomics technology.The core idea is to change the sequential iterative method used in traditional materials research to parallel processing.The quantitative changes cause qualitative changes in material research efficiency,which can complete a large number of samples in a short time.Preparation and characterization.High-throughput characterization technology involves the characterization of material structure and the characterization of various material properties such as mechanical properties,thermodynamic properties,and electromagnetic properties.However,there are few studies on the high-flux characterization of the electromechanical coupling properties of thin film piezoelectric materials that are widely used at present.This article will study the high-throughput test scheme of the lateral piezoelectric coefficient d31 for lead zirconate titanate(PZT)films.This paper designed the testing scheme of the lateral piezoelectric coefficient of the piezoelectric film,including the bubble method test and the cantilever method test based on the positive and inverse piezoelectric effects.Based on the bubble method ball cap model,combined with the piezoelectric constitutive equation,a theoretical model for the bubble method test with a force-electric coupling term was established,and the influence of the film size and external pressure and voltage on the central deflection and stress of the film was analyzed.The theoretical model of piezoelectric coefficient test based on positive piezoelectric effect is established by combining the cantilever beam vibration lumped parameter model and piezoelectric constitutive equation.Based on the cantilever bending equation and piezoelectric constitutive equation,a theoretical model for piezoelectric coefficient test based on the inverse piezoelectric effect is established.The influence of the size of the substrate and the amplitude and frequency of the excitation load on the piezoelectric response are analyzed to provide a basis for the design of bubble film samples and cantilever beam samples.The finite element simulation software is used to establish the bubble sample and the cantilever sample model,and the influence of the thickness of the bubble film sample base thickness and electrode layer on the deformation of the film is analyzed and the correction is made;the size of the cantilever base to the cantilever deformation is analyzed And the effect of the amount of charge is generated,and the size of the base is designed according to the law.Combined with the simulation results of the specific structure of the sample and considering the limitations of the array space,the structural dimensions of the bubble film sample and the cantilever beam sample were designed.A high-throughput test scheme for the lateral piezoelectric coefficient of PZT thin-film materials based on the cantilever structure is designed,that is,the measurement of the deflection of the end of the cantilever beam array is completed by laser scanning test.Based on the requirements of the number of high-throughput test specimens,a 36*4 column cantilever array structure and electrode pattern are designed.The response of the array was analyzed with finite element simulation,and the feasibility of the array structure was verified.Calculate the requirements of instrument testing accuracy within the range of testing the piezoelectric coefficient of PZT films with different components,and provide an important basis for the subsequent development of high-throughput experiments... |
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