Photoelectricity Performance Improvement Of GO Based On Plasma Technology

Graphene is a novel two-dimensional carbon nanomaterial with a unique crystal structure.Because of its unique structure,it has excellent electrical,optical,mechanical and thermal properties.Based on these excellent properties,how to efficiently prepare graphene and how to effectively improve graphene have become the premise of these studies.Large-scale and high-quality preparation of graphene is still an urgent problem for researchers to solve.The existing methods of preparing graphene are mainly divided into wet method and dry method.Wet methods include spraying,spin coating,filtration deposi tion,etc.The preparation of graphene oxide(GO)is usually followed by various reduction methods to obtain reduced GO(RGO).This method is cheap and simple.However,the disadvantage are that the prepared RGO films or aerogels both have more oxygen-containing functional groups and have more defects,making their performance far less than that of intrinsic graphene.The dry method is mainly chemical vapor deposition(CVD)method,which produces graphene with high quality but high cost.In this paper,aiming at the shortcomings of dry and wet methods,plasma enhanced chemical vapor deposition(PECVD)is studied to repair defects of RGO thin films.The three-dimensional nitrogen-doped RGO(NG)was repaired by microwave plasma.It provides a new direction for improving the quality of RGO.In this paper,the factors affecting the preparation of RGO films were analyzed.In view of the steps of GO spraying,aiming at improving the experimental randomness brought by spraying and could change the running speed and path of the nozzle through code according to the experimental needs which greatly improved the experimental efficiency,this paper independently designed a three-dimensional driven spraying platform for this purpose.Using this equipment,we analyzed the influence of various parameters in the spraying equipment on the quality of the RGO film,and found the optimal parameters among these parameters to be used in the preparation of the RGO film and to prepare for the subsequent repair.This paper used PECVD system to repair the RGO films.The previously prepared RGO films were placed in a Faraday stainless steel mesh cage and defects were repaired in a PECVD system.In the process of repair,we explored the influence of different proportions of hydrogen and methane on the repair of RGO films,explored the three RGO states of growth,repair and etching,and discussed the role played by hydrogen in the repair of RGO films.Finally,this paper found an optimal condition suitable for the repair of RGO films,which improved the performance of RGO films after repair.After the repair experiment of two-dimensional RGO films,we expanded the application field of PECVD method for RGO repair.In this paper,the repair experiment of NG is also carried out.This paper used microwave plasma to repair NG,and found that its conductivity was improved.Through the characterization analysis of NG before and after treatment,the beneficial changes of microwave plasma to NG were explained from the internal mechanism,which playing a boosting role in its electrochemical application.It is hoped that through our improvement of the spraying process and the repair of 2D and 3D RGO,it is possible to produce high-quality graphene in large scale.