Photoelectric Properties Of N-ZnO Nanorod/p-GaN Heterojunction LED

Following the incandescent lamp and fluorescent lamp,the third generation solid light source LED(Light Emitting Diode)with high efficiency,long lifetime,no pollution,low energy consumption has appeared in the people’s vision.As important wide band gap semiconductor materials,Zinc Oxide(ZnO)and gallium nitride(GaN),which have excellent photoelectric properties,are widely used in light-emitting diodes and other photoelectric fields.With the discovery of the external laser emission in the ZnO nanowires at room temperature,the potential applications of the one dimensional ZnO nanomaterials,such as ZnO nanowires,nanowires and nanorods,in optoelectronic devices have attracted great attention.ZnO is a novel direct bandgap wide bandgap semiconductor material with an exciton binding energy of up to 60 meV.It has unique advantages as an LED blue-violet luminescent material.For LED,building a reasonable heterostructure is one of the keys to achieving high performance light emitting devices.At present,N type ZnO materials can be obtained by many means.However,it is still difficult to prepare stable P type ZnO materials.Since GaN and ZnO have the same wurtzite structure in the steady state and their lattice constants are similar,a breakthrough has been made in the preparation of P-type Ga N,which makes P-type GaN ideal for P-type ZnO when making heterojunction devices.Alternatives,this novel n-ZnO nanorod/pGaN heterojunction LED has been prepared in many laboratories,but no one has ever conducted a reasonable theoretical analysis,nor has it been used to analyze it.Theoretically,the reasons affecting the luminous efficiency of the new structure have never been studied.In order to improve the luminous efficiency of n-ZnO nanorods/p-GaN heterojunction LEDs,this paper first selected a reasonable insertion layer and simulated and analyzed the insertion layer through Material Studio software.Next Silvaco software was used to simuluate the photoelectric performance of n-Zn Onanorod/p-GaN heterojunction LED.The influencing factors of the luminous efficiency of n-Zn O nanorods/p-GaN heterojunction LEDs were further studied.The effects of the diameter,length and spacing of ZnO nanorods on the LED luminescence efficiency of the n-ZnO nanorod /p-GaN heterojunction LED are discussed and verified by simulation,which provides the theoretical basis for realizing the commercial production of the n-Zn O nanorod /p-GaN heterojunction LED and a large amount of research time can be saved.At the end of this paper,the optical efficiency of LED is simulated and analyzed.The effect of ZnO nanorods on the efficiency of n-ZnO nanorods /p-GaN heterojunction LED is theoretically analyzed and the modeling verification is carried out through the optical software Tracepro,and the efficiency of the lower plane structure LED and ZnO nanorod structure LED is compared.