| With the gradual development of power supply and distribution automation system is more and more complex and intelligent,the reliable operation of power supply and distribution automation system is very important to the safe operation of the whole power grid.The control chip of power supply and distribution automation system,as the command center of the system,is paid more and more attention to its reliability reinforcement.With the increase of large nuclear power plants and the development of aerospace technology,nuclear radiation,outer space radiation and fission decay in the packaging process may lead to high-energy particles such as neutrons,protons and alpha particles bombarding the control chip.It is easy to cause soft error(SE)in the chip.If it cannot be recovered in time,it may eventually lead to the error or even failure of the control chip.Soft errors are transient errors caused by transient faults and transient faults are caused by particle bombardment.At present,the main types of soft errors are single event upset(SEU),single event double upset(SEDU)and single event transient(SET).With the progress of technology,in the smaller size of integrated circuit control chip,particle bombardment may lead to double node of the storage unit logic state changes,the relevant research shows that when the feature size of CMOS integrated circuit to reduce to 90 nm,SEDU caused charge sharing has been seriously affected the reliability of the control chip integrated circuits.This paper studies the reliability reinforcement of the control chip of power supply and distribution automation system,and puts forward three kinds of radiation resistant latch structures,one of which can only tolerate SEU and the other two can tolerate SEU and SEDU.This paper introduces the significance of chip reliability reinforcement in power supply and distribution automation system,the main factors of soft error affecting chip reliability,and the HSPICE simulation tool used in simulation.Secondly,some reinforcement structures proposed in the past and the latest research results in recent years are introduced,and three new reinforcement structures are designed:a structure only used for SEU tolerance,a structure can be tolerated by SEU and SEDU at the same time.Finally,a structure that can be reinforced by SEU,SEDU and SET.The influence on the reliability of control chip is studied when only SEU is considered,and a low cost anti-SEU reinforcement structure is proposed.The feedback loop is added to the C element to ensure the reliability of the circuit and reduce the cost of power delay.The simulation results prove the reliability of the structure design.Compared with the classical SEU-tolerant structure proposed by the predecessors,the design of this latch has made great progress in the SEU-tolerant ability and greatly reduced the cost.The influence of SEU and SEDU on the reliability of control chip is studied.In this paper,a new high-performance fault-tolerant structure is proposed to solve the latch logic errors caused by multi-node problems.The latch improves the MNUTL structure,reduces the power consumption and delay,makes up for the shortcomings of multi-node upsets tolerance,and enhances the stability of the structure.HSPICE simulation shows that the proposed latch structure can tolerate many kinds of soft errors that may lead to logic errors.The influence of SEU,SEDU and SET on the reliability of control chip is studied.In this paper,a soft error reinforced storage cell based on double interlocking structure is proposed,and its cost and adaptability are analyzed.HSPICE simulation results show that the cell can protect against soft errors under different operating voltages,which proves the feasibility of the structure and applicability under different environments.Compared with other reinforced structures,this structure has lower power consumption and delay cost,and has more comprehensive fault-tolerant ability,which can protect the logic errors.Figure[40]table[11]reference[71]... |
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