| The most repeated step in the integrated circuit manufacturing is the photolithography step. Photoresist, which absorbs light when radiated, undergoes chemical reaction in the exposed regions. Afterwards the photoresist, which remains on the surface, has to be stripped away. This report investigates the efficiency of isopropyl alcohol in stripping the photoresist after three different processing steps. The three different surfaces are post oxide, post ion implanted, and post-metal. The use of isopropyl alcohol in an ultrasonic bath with the addition of ammonium fluoride and tetra methyl ammonium hydroxide is also investigated. The results show that for post oxide surfaces isopropyl alcohol in ultrasonic bath at 40 degree Celsius strips the photoresists at the rate of about 2600Å per minute and for post metal at about 9000Å per minute and for post ion implanted surface at about 764Å per minute. |
