Terahertz imaging technology has an important application prospect in the fields of biomedicine,security imaging,radio astronomy,energy and environment,material chemistry and high-speed communication.Large-scale terahertz array detector is the key of terahertz fast imaging technology,and it is also a major development trend of terahertz detection research at present.the Nb5N6terahertz array detector we studied has the advantages of working at room temperature,high responsivity,simple preparation process and large-scale preparation.Aiming at the key technologies of large-scale array detection,this paper mainly studies the design and simulation of array detector,the optimization of preparation process,the performance characterization of array detector,the flip-chip interconnection of array detector and readout circuit and its application.The main research results are as follows:1.The Nb5N6single-pixel terahertz detector aimed at the 0.65 THz frequency band was expanded to 32×32 and 64×64 array scales.By optimizing the preparation process,a large-scale terahertz array detector with excellent performance was successfully prepared.2.The performance of the fabricated array chip is deeply characterized,including DC responsivity,RF responsivity,noise voltage,NEP and response time of single image elements in the array devices.Especially,the device resistance distribution and the optimal DC responsivity distribution of different sizes of array detectors are successfully characterized,the unit NEP of the array device reaches 13~30 pw/,and the uniformity is good.3.The technology of the flip-chip interconnection is explored,and the flip-chip mode of cold pressing welding is used to apply pressure at room temperature to make the terahertz array chip and readout circuit chip interconnect successfully,and cooperate with other students to realize the imaging application of the detection chip. |