Preparation Of Few Layer MoS₂ Thin Films By Magnetron Sputtering Combined With Plasma Treatment

At present,silicon-based micro nano devices have basically reached the theoretical limit,and the research of new semiconductor materials is imminent.Molybdenum disulfide(MoS₂)is a typical transition metal chalcogenide compound.Its two-dimensional structure exhibits excellent optical properties,thermoelectric properties and optoelectronic properties,and has broad application prospects in the field of semiconductors.In order to realize the practical application of two-dimensional MoS₂ thin films in devices,it is particularly important to prepare large-scale and controllable high-quality MoS₂ thin films.Magnetron sputtering is a method that can realize large-area preparation of thin films.It has the characteristics of simple process,fast film-forming speed,low cost and good repeatability.In this paper,MoS₂ thin films with few layers were prepared by magnetron sputtering,plasma layer reduction,annealing and vulcanization.The effects of process parameters in the process of preparation and post-treatment on the morphology and optical properties of the films were investigated.The main research contents and results are as follows:(1)MoS₂ was prepared by magnetron sputtering,and the effects of different sputtering power and sputtering time on the morphology and properties of the films were investigated.The results show that:with quartz as the substrate,except for the power of 5 W,the films prepared under other powers have good compactness and uniformity.With the increase of sputtering power,the growth rate of the films increases.When sapphire was used as the substrate,the power was 25 W,and the sputtering time was 2 min,the surface of the substrate was completely covered and a dense film was formed,and the prepared MoS₂ film had good crystallinity.(2)The effects of different annealing parameters(annealing time and annealing temperature)on the morphology and optical properties of the films were explored,and the films were de-layered by plasma etching to control the number of layers.The results show that the higher the annealing temperature(500?800?),the faster the crystallization of the film;the longer the annealing time,the more obvious the improvement of the film crystallinity,but when the number of film layers is small,too high temperature and too long time It will cause the components to volatilize and affect the quality of the film.The use of plasma to etch the multilayer MoS₂ film can effectively reduce the layers of the film.After 900 s of plasma treatment,a dense and uniform film with three layers is obtained.