Study Of The Flashover Mechanism Of Semi-insulating GaAs Photoconductive Semiconductor Switches With The Trigger Of Laser

With the rapid development of semiconductor technology,the use of semiconductor materials own characteristics produced a variety of new semiconductor devices are widely used.Especially in semi-insulating GaAs photoconductive switch utilizing GaAs high resistivity,high electron mobility and other features made in response to its high switching speed,very small inductance and large flow capacity,by domestic widespread attention outside researchers.Because of the switch has the above advantages,It is considered the most promising power switching device.However,,restrict the development of the photoconductive switch the main reason:When a high voltage is applied at both ends of the photoconductive switch,the switch surface flashover discharge phenomenon will occur,especially at the electrode edges,often accompanied by destructive phenomenon,but at this time applied electric field intensity is much lower than GaAs breakdown field strength of the material itself,will lead to the threshold voltage photoconductive switches GaAs material itself is much lower than the breakdown voltage,which greatly limits the GaAs photoconductive high power switching applications in the area.So the study of semiconductor material surface flashover discharge mechanism,improve flashover threshold voltage has become a new research boom,accompanied by a variety of proposed flashover theoretical model,flashover in semiconductor materials have achieved certain results,but since the semiconductor flashover material is an extremely complex phenomenon,today,people mechanism flashover of research is not very clear,so the study flashover mechanism of flashover current distribution and the impact of flashover factors inhibit flashover discharge phenomenon,raise the flash network threshold voltage becomes a serious problem.At first,the paper studied the GaAs photoconductive switch on the light trigger photoconductive properties of the transient,as the breakthrough point,study of GaAs photoconductive switch light trigger transient of GaAs semiconductor photocatalysis raw carrier current density,conductivity and electric field,the resistivity changes affect the flashover current.With the experiment measured the GaAs PCSS bias voltage under the condition of light trigger flashover and only add offset voltage of the flashover current size,contrast light trigger flashover current and the flashover current size,explains the light trigger transient influence flashover current size distribution mechanismSecond record in different ways through the experiment of flashover triggered by GaAs photoconductive switch flashover spectra of different trigger GaAs semiconductor luminous efficiency under different impact the PCSS flashover spectrum,explains the GaAs PCSS appear the cause of the light blue flashover,studied the GaAs PCSS trigger the flashover mechanism of transient.Finally through the test of air breakdown discharge spectrum,the characteristics of the insulator flashover insulation flashover spectrum through the air and half GaAs PCSS flashover spectral differences,illustrates the gallium arsenide semiconductor flashover and the difference between the insulator flashover,thus fundamentally distinguishes between the light trigger transient GaAs PCSS flashover and the theory of insulator flashover.