Study On Single Event Effect Of Advanced Commercial Chips For Aerospace Applications

With the upgrading of semiconductor process nodes,commercial chips have become more and more popular for space missions because of high performance and low cost.The highenergy particles in space environment pass through the sensitive area of semiconductor materials,and the single event effect will cause commercial chips temporary failure or even permanent scrap.As the two most commonly used commercial chips,advanced and reliable SRAM FPGA and high precision and high sampling rate ADC are the key to the successful space exploration.The previous design of SRAM type FPGA single event effect testing system mainly focused on the single event effect research of a process node,and the longitudinal study of each process node relied on the TCAD simulation software for device analysis,which lacked the control test verification of each advanced node.To solve the above problems,this thesis designed a single event effect test system for SRAM FPGA,and carried out the SRAM FPGA laser irradiation test at 28nm～16nm process nodes.By laser irradiation test,the storage content of 20 nm FPGA has more single event upset than that of 28 nm FPGA under the same energy.This is because the integration of transistors has been greatly improved due to technological progress,and more storage units per unit area are affected by irradiation.The 16 nm FPGA memory upset is significantly lower than that of the 20 nm FPGA,because the 16 nm FPGA transistors use FINFET structure,which strengthens the gate control of the channel.The single event latch-up was detected in the 28nm～16nm FPGA at the laser energy of 4.2n J,3.3n J and 1.6n J.This is because with the reduction of device size,the thinner the base region in the parasitic PNPN structure,the higher the current amplification coefficient,and the more prone the latch-up was to be generated by the surge of current after positive feedback.No single event function interruption of FPGA was detected during the whole experiment.Previous ADC single event effect testing systems mainly rely on a single heavy ion or laser irradiation test.Heavy ion source has the disadvantages of machine time tension,high cost and inconvenience;However,when the laser energy emitted by the laser is high,the estimation of LET value of laser energy quantization is inaccurate due to mechanism reasons such as two-photon absorption,and the experimental conclusion is difficult to analyze.To solve the above problems,this thesis designed a high-precision and high-sampling rate ADC single event effect test system,which combined heavy ion and laser to carry out irradiation test.Heavy ion test verified that the commercial ADC tested had spaceflight grade anti single event latch-up capability,and single event function interruption was detected during the whole process.According to the laser irradiation test,with the increase of the laser energy,the upset value of the digital signal at the output end increases,and the ADC single event transient phenomenon increases.The number of digital signal empties read increased,and the phenomenon of ADC single event upset and single event function interruption increased.Due to the large amount of laser injection,the 30 n J laser can scan the sensitive nodes of the ADC,resulting in permanent failure of the ADC and single event hard error.