Research On The Preparation Technology Of High Manganese Silicide On Quartz Glass Substrate

In this paper,a layer of silicon and manganese were sputtered successively on quartz glass substrate by magnetron sputtering,and then High Mangnese Silicide(HMS)was prepared by post-annealing method.The effects of sputtering time ratio,anneal treatment and sputtering process on the preparation of HMS on quartz glass were studied.The optimum time ratio,anneal conditions and sputtering parameters of single-phase HMS films were proposed.The structure,morphology and properties of HMS films were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM)and four-probe tester.The results show that when the sputtering time of manganese is 6 min,the optimal sputtering time of silicon is 60 min,and the optimal heat treatment parameters are “700 ?-6 h”.Under this condition,the crystal structure and morphology of HMS films are the best.Based on the optimum heat treatment conditions,the effects of sputtering parameters on the high manganese silicon films were studied.The results show that the sputtering parameters have an important influence on the crystallinity of the films.The sputtering power is 80-120 W,the argon flow rate is 10-30 sccm,and the sputtering pressure is 1.5-2.5 Pa,HMS can be formed.However,the crystallinity and morphology of the thin films are the best when the sputtering parameters are 110 W,20 sccm and 2.0 Pa,respectively.The effects of sputtering time,annealing temperature and annealing time on the electrical properties of the films were studied.The results show that the sheet resistance of the films increases rapidly when the sputtering time is 60 min,which indicates that the crystalline quality of the films is obviously improved;When annealing temperature is 700 ?,the decrease of sheet resistance is due to the formation of well crystallized single phase HMS;When the annealing time is from 5 h to 6 h,the increase of sheet resistance is due to the formation of well crystallized single phase HMS,and then the sharp increase of sheet resistance is caused by the appearance of Mn O.