The Design Of Millimeter Wave Variable Gain Low Noise Amplifier Based On CMOS Process

With the advent of the 5G era,people have higher and higher requirements for high data rate network transmission and massive terminal access rates.The rapid development of millimeter wave technology has become an important research direction in the wireless communication system,which not only accelerates 5G communication,it is also widely used in industries such as satellite communications and the Internet of Things.The millimeter-wave communication network system has become a network system with the advantages of high throughput,wide coverage,and small terminals,and has also received widespread attention and research.As a part of the wireless communication system,the variable gain amplifier and the low noise amplifier are particularly important in the receiver.In terms of low cost and high integration,CMOS technology outperforms compound technology,making CMOS technology widely used in millimeter-wave receivers.Therefore,it is of great significance for in-depth study of millimeter-wave variable gain amplifiers and low noise amplifiers based on CMOS technology.First,this thesis investigates the research and development status of variable gain amplifiers and low noise amplifiers in the millimeter wave frequency band at home and abroad.Simultaneously,the active device MOSFET transistor and passive device capacitor,on-chip spiral inductor and on-chip transformer used in the designed amplifier are introduced and analyzed.Then the basic theory of variable gain amplifier and low noise amplifier are introduced respectively.The other is a compact wideband low noise amplifier working in 31～45GHz.The circuit adopts a two-stage cascode structure,and the input matching network based on the transformer realizes broadband input matching,and two different types of drain-source feedback transformers realize high gain and high stability respectively.The area occupied by the circuit is only 0.44×0.35mm~2(including Pad).The simulation results of this LNA show that the 3d B bandwidth is 31～45GHz,the1d B bandwidth is 32～44GHz,the maximum gain is 18.2d B,the minimum noise figure is 4.5d B,and the DC power consumption of the circuit is 21.5m W.The other is a compact wideband low noise amplifier working in 31～45GHz.The circuit adopts a two-stage cascode structure,and the transformer-based input matching network realizes broadband input matching,and the drain-source positive feedback and drain-source negative feedback achieve high gain and high stability respectively.The area occupied by the circuit is only 0.44×0.35mm~2(including Pad).The simulation results of this LNA show that the 3d B bandwidth is 31～45GHz,the1d B bandwidth is 32～44GHz,the maximum gain is 18.2d B,the minimum noise figure is 4.5d B,and the DC power consumption of the circuit is 21.5m W.This thesis analyzes and summarizes the design methods of millimeter-wave variable-gain amplifiers and low-noise amplifiers in CMOS technology.