Researches On Key Technologies For Millimeter-wave Amplifier Based On CMOS Process

The fifth generation mobile communication technology(5th Generation Mobile Communication Technology,5G)has the characteristics of high speed,low delay and large bandwidth,which can provide important technical supports for the upgrade of many industries.Among them,the high-performance and low-cost 5G millimeter-wave transceiver systems are the current research and application hotspot in the industry.Millimeter-wave amplifiers based on CMOS technology are the significant module in the transceivers,but are limited by processes such as high substrate loss and low breakdown voltage,which seriously deteriorate the gain,bandwidth,and linearity of the amplifier.This paper will conduct in-depth research on the key technologies of millimeter-wave low-noise amplifier(LNA)and power amplifier(PA)based on CMOS technology,and further propose the high-performance circuit structures,which are applied to the design of a millimeter-wave single-channel system.The main research contents are as follows:1)A transformer-based millimeter-wave low-noise amplifiers.This paper proposes and designs a Ka-band LNA,which uses the gate-drain transformer coupling technology to neutralize the gate-drain feedback capacitance of the transistor for improving the stability and expanding the output matching bandwidth.A common-source to common-source current reused technology is adopted to reduce the power consumption of the circuit effectively without deteriorating the gain.Finally,the wideband input matching is realized through the load feedback.Fabricated in 65-nm CMOS process,The proposed LNA achieves 19-38 GHz3-dB bandwidth,13.8 dB gain,2.9 dB noise factor and only 4.6 m W DC power consumption.Thanks to the compact design of the layout and the area advantage of the transformer,the core size of the proposed LNA is only 0.055 mm~2.2)A millimeter-wave power amplifier based on post-distortion gain shaping.This paper analyzes the advantages and disadvantages of the existing pre-distortion technology and proposes a post-distortion technology with gain response shaping.Compared with the traditional flat pre-distortion technique,the proposed technique shapes a peaking for the gain response curve at closed to the 1-dB compression point of the amplifier.Hance,the 1-dB compression point of the circuit is improved.Moreover,the cascode variable-gain technology is used to achieve the gain adjustment..Fabricated in 65-nm CMOS process,the measured results of the PA shows 16-dbm output 1-dB compression point with 29.5%power added efficiency(PAE)and 16.7 dBm saturation output power with 34%maximum PAE.The maximum gain reaches 33.1 dB with 3-dB bandwidth from 23.1 to 29 GHz and 31.1 dB dynamic range of gain adjustment.3)A high-performance millimeter-wave single-channel front-end transmitter for phased array system.Based on the key technology research of the amplifiers,a single-channel front-end transmitter is designed for millimeter-wave phased array system.The transmitter front-end integrates a Ka-band power amplifier,phase shifter,attenuator,and two driver amplifiers.The amplitude and phase distortion compensation technology and a novel triple inductance transformers are adopted to improve the system linearity and reduce the area cost,respectively.Finally,a 27-34 GHz 3-dB bandwidth,34.2 dB gain,15.6 dBm output 1-dB compression point and 25%channel PAE are achieved.