In Nsrl Surface Physics Station Debugging And Wide Band Gap Semiconductor Srpes

As a method to investigate the electronic structures for various materials, the synchrotron radiation photoelectron spectroscopy (SRPES) has become a very powerful experimental technique after its development for several decades. For its great advantages, such as probing the surface without damages, in-sit analysis in UHV condition, this technique has been widely used in the research of band structures, the electronic states of surface and interface for solid-state materials. On the other hand, the third generation semi-conductors including GaN, SiC and ZnO, which are so-called wide band gap semiconductors, express some useful properties such as wide band gap, good chemical stability, excellent thermal capability. As a result, they are regarded as the most suitable candidates for the next generation opt-electronic and micro-electronic devices with high power, high frequency and high stability in high temperature environment. The research of band structures, surface reconstruction and electronic states of surface and interface by the method of SRPES is very important not only in the fundamental research, but also in the field of semiconductor device manufacturing. So the studies related to the above topics have been always the focus in this field up to now.In this thesis, we report the commissioning results of the new-built beamline and the related surface physics experimental station at first. Then based on this experimental station, series of studies have been done to investigate the band structures, surface reconstruction and electronic states of surface and interface by the method of angle resolved photoelectron spectroscopy (ARPES) and core-level spectroscopy with synchrotron radiation. The major researches and results are listed as the following:1. The commissioning of the surface physics station and the related beamline:During the period of the beamline test, the resolving powers for two gratings of 12001ines and 600lines of the monochromer have been obtained through the absorption spectrum of Ar L_2,3 and Kr M_4,5 by using a gas cell installed at the end of...