| A two-dimensional, general purpose, finite element microelectronic device simulator is developed step by step by using finite element method. Newton's method is used to linearize the semiconductor equations, which are solved simultaneously by a sparse matrix solver. This simulator takes into account surface states, tunneling phenomenon, and recombination-generation. A mesh generator is developed for preparing the input data for the simulator. This mesh generator can easily generate mesh for a different device. This simulator can do the modeling for MOSFETs, diode and EEPROM transistors, etc. An EEPROM device model is investigated by this simulator in both the programming and the erasing operations. The results are in agreement with the simulation results of the finite difference program and of experimental data. An inversion-layer MIS solar cell is modeled by this simulator without success. This work has overcome the complexities and difficulties for developing a useful semiconductor device simulator using finite element method and a general mesh generator, which are very useful for the researchers and designers in the area of VLSI electronics. |
