Studied On The Switching Speed Of The New Structure High-voltage Power Integrated Device

A new structure device integrating a power switch transistor and a fast recovery diode in anti-paralleled on a single chip is studied in this paper. The power-switching transistor used here is Gate Associated Transistor (OAT) and the fast recovery diode is Merged PinlSchottky (MPS) diode. It is verified by simulations and experiments that this new structure has gained both faster recovery speed of diode and faster switching speed of transistor than the conventional structure consisted of a conventional power Bipolar Junction Transistor (BJT) and a pin diode. The same time, it is discovered that they are interactional between transistor and diode by simulations. So we deliver Schottky-j unction-expand, resistance-bridge and block-wall. It is verified by simulations and experiments that some of new structures have gained both faster recovery speed of diode and faster switching speed of transistor than the conventional structure (BJT+Pin). Those new structures can be realized on an ordinary planar processing line, and the fast switching speed can be achieved at a low cost without the special carrier-life-controlling technology such as Pt doping.