The Design Of Mmagnetic Confinement Mmagnetron Sputtering Source

At present, magnetron sputtering widely applied to the surface modification, decorative film, optical thin film, superconducting thin films and function in the preparation etc. Because magnetron sputtering film technology has many advantages, such as the high energy of sedimentary atoms (ions), the high density of membrane layer, the strong adhesion and small stress of film, so it has become the main technology of thin film coating. But the low utilization ratio of target is the main problem in the industry of magnetron sputtering film, usually in 20%～35%. For years, researchers have been through all kinds of ways to improve material utilization ratio. Therefore, how to improve the material utilization becomes an important issue.Based on the principle of magnetic confinements as theoretical basis, we design a new magnetron sputtering source to improve the utilization of target. The principle of magnetic mirror was usesd in the sputtering source,which confinement the plasma above the target area, so the area of etching target is not the form of runway ring. But the whole new forms of etching.This design use the software of Ansys to simulate magnetic field. Based on the simulation, we complete the magnetic field design, completion of design and design target. And manufacture principle prototype. The experimental device which uses pure aluminum as target is tested in the vacuum chamber.Experimental results show that the works of the source of magnetron sputtering is good, and compared to traditional magnetron sputtering source, the effect of etching have improved a lot. Meanwhile, the runway ring of target is disappeared and etching area for the target surface. When the target surface magnetic field intensity for 37-45mT, gas pressure 3.1 Pa, the output voltage is 350V and current output is 0.6 A, Working of sputtering source is the most stable and etching area of the target surface is the whole.