Study On Preparation And Physical Properties For ZnS Films

Having the features of strong ion-bond, high melting point, broad band gap,colourless and transparent, ZnS semiconductor films are widely used in the gas sensitive sensors, humidity-sensitive sensors, transparent conductive films, solar cells and other fields.β-ZnS thin films with(111)direction were successfully fabricated by magnetron sputtering with different deposition time from 1 h to 2.5 h. ZnS thin films are detected by the XRD, SEM, Step profiler and ellipsometer. It was found that the density gets higher, the crystal size gets smaller, and the refractivity becomes higher with the deposition time becomes longer. By the simulation from ellipsometer, we found that in 1.461-2.885 ev simulation range, the refractivity of ZnS rises from 2.12 to 2.40.The extinction coefficient depend on the crystal size, the number of crystal boundaries and the porosity.ZnS films were deposited by magnetron sputtering with different deposition temperatures from room temperature to 400℃. The thin films were detected by the XRD, SEM, Step profiler and ellipsometer. The best crystal ZnS thin film with the biggest crystalline radius 28.96 nm was fabricated at the deposition temperature 200℃.The refractive index of ZnS thin films change from 2.08 to 2.40 with the substrate temperature increasing by ellipsometer analysis. Photoluminence spectrum indicates the electron transition within Zn vacancies leads to the ZnS film Ultraviolet emision.In addition, the resistivity of La0.9Sb0.1MnO3 thin film is investigated by using the random network model based on the phase separation scenario. The good quantitative simulated results reveal that the magnetic field-induced change results in the resistivity reduction and the colossal magnetoresistance.