Prepration Of SBT Nano Memristor And Design Of Its Chaotic Circuit

As a new basic circuit element different from resistance,inductance and capacitance,the concept of memristor was firstly proposed by Chinese American scientist Cai Shaotang in 1971.Until 2008,the HP Labs produced the world’s first kind of physical memristor,namely TiO-2 memristor which had aroused wide attention at home and abroad.The essence of memristor is nonlinear resistance controlled by magnetic flux or quantity of electricity.On account of its nanoscale characteristics,memristor can be used as a non-volatile memory.Memory function of memristor is similar to the memory principle of human neurons,so the memristor can be applied to artificial intelligence circuit to simulate synaptic behavior of brain neurons.Therefore,memristor has become a hot research direction and possesses broad application prospects.Firstly,this paper introduces the basic concept,model and development status of memristor,and describes the research process and characteristics of the chaotic system.Secondly,Sr_0.95Ba_0.05TiO₃（SBT）nano-film is prepared by magnetron sputtering,to develop a kind of SBT nano physical memristor.The fabrication method and working mechanism of SBT nano memristor are also expounded.The performance of SBT nano memristor is analyzed,and a mathematical model of the SBT nano memristor is established.Finally,a new fifth-order chaotic circuit is designed based on the model of SBT nano memristor,to study the dynamic characteristics of the memristor chaotic circuit.In this paper,a new kind of physical memristor is prepared by SBT material,and the influence of temperature and voltage on its conductivity is studied.It is proved that the SBT nano memristor has good nonlinearity and volatility,and the application value of the SBT nano memristor is verified by applying the SBT nano memristor to the memristor chaotic circuit.