Simulation Study On Electrical Property Of Memristor Cell

Currently, memristor has gotten more attention by the researchers as a new nano-scale memory, while COMS device is confronted with the limitation of the IC fabrication technology. Memristor has a lot of advantages such as small size, low po-wer consumption, fast reading and writing speed, etc, which has brought unprecedent-ed opportunities for information storage and ultra-high performance computing.That is expected to replace the current mainstream memory Flash, to be one of the best in the next generation of new non-volatile memory.Physical principle of the memristor material are still controversial. The unclear principle and under effective way to control has limited the progress of memristor peformance and its practical process.Although there are a large number of experimental studies on memristor characteristics, and they gives some amount of theoretical mode, there is still no clear acknowledge of the specific microscopic processes because of lack of the characterization of electron transport inside nano scale devices. Therefore, from the perspective of theoretical simulation, the focus of current research is still basic electrical characteristics of memristor and research on memristor resistive mechanism. Memristor computer simulation study of the electrical principle of cells will provide theoretical basis for materials research and memristor characteristic promotion.First-principle calculation has been widely applied to various fields of materials science. Research can be done on the micro level,and it provides an accurate method for predicting and evaluating the materials' physical characteristics at the electronic level. First-principle calculation can get nanoscale device structures, defects, doping and other characteristics by computer simulation, and analyze the results on electroniclevel, as well as predict the electrical properties of nanoscale device basing on the results. Therefore, calculation of memristor units' electrical characteristics is an ideal choice to analyze its memristor mechanism.In this paper, we give a detailed and reasonable speculation on the mechanism of memristor material. The migration of electric charged vacancies is the main reason of resistive behavior. Memristor doped vacancies model was built using calculation software Atomistix Tool Kit. Based on physical model analysis, vacancy defect locations of memristor unit functional layer under different voltages are predicted, and a series of twoelectrode single component model was built following the rule of boundary migration model. By calculation and analysis of DC IV characteristics of the device, areasonable explanation of its resistive behavior was brought up. The results show that the boundary migration does change resistance of the device. This study provides not only theoretical reference for future experiments and memristor fabrication, but also theoretical basis for memristor mechanism study.