Analysis And Design Of GaN-Based Boost PFC

The AC/DC converter is widely used in daily life and industrial applications,such as electronic products power supply,communication power supply,uninterruptible power supply,industrial power supply,etc.However,the harmonic pollution caused by it.Harmonic pollution not only seriously affect the security of the power grid,but also affect the switching power supply.In order to ruduce the harmonic pollution,international and domestic organizations are becoming more and more strict in the formulation of standards of power quality.Power factor correction technology becomes a hotspot in the research of power electronics.With the improvement of living standard,people are becoming more and more dependent on electronic products such as mobile phones and laptops.Improving the efficiency and power density of power factor correction converter is one of the useful ways to make the power supply equipment miniaturization and portable.Si-based Boost PFC converter has been widely studied.As the characteristics of Si devices have been reach the limit,improvement of converter is very difficult.In recent years,the appearance of new wide bandgap semiconductor GaN,due to its superior material properties,makes the GaN device has the advantages of fast switching speed,low on resistance and so on.The increasing popularity of GaN devices provides the possibility to improve the performance of the converter.Performance of the converter can reach a new level.This paper introduces a design of Boost PFC GaN-based devices,from the main circuit design,loss analysis to control principle.Finally,the use of GaN HEMT and SiC diodes and selected NCP1654 as the controller to achieve a 300 W 200kHz Boost PFC converter.The system design is verified by simulation and experiment,which shows the potential of wide band gap semiconductor device in improving system efficiency.