Preparation And Characterization Of Graphene And Composite Materials

The graphene is a two-dimensional crystal material with a single atomic layer,it is a special material with a honeycomb structure formed by closely stacking carbon atoms through the hybridized carbon atoms.High quality graphene was prepared by deposition,and the related transfer technology of graphene was studied.The main contents of this paper are as follows.In this paper,the optimum conditions for graphene growth are studied by studying the roughness of copper foil and the partial pressure ratio of growth pressure.It is found that the smaller the rough degree is,the higher the quality of graphene is,the closer the partial pressure ratio is to 7: 1,the sharper the Raman 2D peak of graphene is.The fewer graphene defects.It is also found that the gas flow in the furnace affects the quality of graphene grown by different folding and placing methods of copper foil.In this paper,the effects of wet etching copper foil method,bubbling method and heat release tape method on the transfer quality of graphene are investigated.It is found that the copper residue of graphene transferred by bubbling method is less,but it is easy to be damaged.The graphene transferred by wet etching has more copper and PMMA residues,and the high quality graphene film is finally transferred through the improved wet etching technique.Based on the research of(1)and(2),the preparation of high quality graphene by methane,and the use of wet etching technology,the fabrication technology of devices is used.A Schottky structure was prepared from graphene and semiconductor zinc oxide nanocrystalline films,and the structure was analyzed and studied.