Study On High Depth-Width Ratio(TSV) Based On PECVD Film Properties

Based on the manufacturing process of electronic components,this paper deeply combines the technology of Through Silicon Via in the rear packaging,selects the deep-h ole insulating layer deposition process in via-last of TSV,and conducts a detailed discussion.Based on the method of preparing SiO2 film by Chemical Vapor Deposition,Plasma Enhanced Chemical Vapor Deposition technology was selected to systematically introduce the generation of Plasma by glow discharge Deposition.Final ly,combined with the Single Variable Test and structural stress Test of SiO2 film,the influence of process parameters on the performance of deep hole insulation layer was systematically analyzed.The specific research con tent is as follows:Based on the deposition principle of PECVD,the generation of plasma and the principle of glow discharge were studied,and the equipment structure,equipment use and equipment process of the large-scale PECVD equipment in the actual production were introduced in detail.The SVT SiO2 thin films and data collection,through changing the pole spacing of chamber,the high frequency power,low power,chamber pressure and flow of TEOS,oxygen flow,helium flow,the overall gas flow eight parameters,studied the process parameters on the film deposition rate,uniformity and the influence of refractive index,stress four performance,and further influence the tendency analysis.The structural stress test of SiO2 film was carried out to study the changes of the structural stress of the SiO2 film in three different structures of 0.25 ?m,0.5 ?m and 1 ?m)under the same deposition conditions for four consecutive times,including the stress analysis of the four deposition films under each structure,as well as the stress analysis at room temperature and high temperature.Combined with SVT test and stress test structure,studied the mouth mask morphology,low-frequency power,chamber pressure and step-by-step deposition number four conditions on the pore size 5 ?m wide,deep hole than 10:1 TSV insulation wall coverage,at last,through to optimize the film deposition rate,stress,breakdown voltage and leakage current main performance test,finally get good continuity and stable performance,deep hole insulating layer deposition process.