| The GdVO4 crystal is a kind of excellent material as laser crystal host. In this thesis its growth technology, defect and rare earth ion dopant, optical spectrum analysis and the related calculations were investigated.The device, process and influence factors of crystal growth were analyzed in detail. Optimum technical parameters were obtained, such as the rotation rate of about 20r/min and pulling rate of 12mm/h. High quality GdVO4, Pr:GdVO4, Yb:GdVO4 crystals were grown with Czochralski method, especially, the growth of Pr:GdVO4 was reported here for the first time to our knowledge.Cell parameters of the crystals were determined by XRD. The results show that crystal structure was not affected largely after doping with rare earth ions. The dislocation was tested by etching method and the macroscopic and microscopic defect were observed.Absorption spectra of Pr:GdVO4 were observed, including optical axial spectrum,σ-spectrum andπ-spectrum. Fluorescence spectrum excited with the 404nm, 483nm, 488nm and 532nm was tested. Energy levels of Pr3+ were assigned through analyzing the absorption and fluorescence spectra. The Judd-Ofelt theory was applied to calculate intensity parametersΩ2=0.1243×10-19cm2,Ω4=0.4380×10-19cm2, ?6= 0.4831×10-19cm2) of Pr3+ in GdVO4 crystal from the emission firstly, and several spectral parameters were calculated.Absorption spectra of Yb3+:GdVO4 were tested. Fluorescence spectrum excited with the 940nm and 976nm was tested and energy levels of Yb3+ were assigned. The line intensity, oscillator strength, transition probability and radioactive lifetime were obtained.
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