| Indium tin oxide (ITO) is a tin-doped semiconductor material. ITO material has consumed more than 80% of the indium produced over the world. ITO films are manufactured mostly by magnetron sputtering with an ITO ceramic as the target resource. ITO film is a heavily doped n-type semiconductor material. It shows a series of unique optical electrical properties, such as a low rate of resistance and high visible light transmission, and so on. It is widely used in computers, energy, electronics, optoelectronics, military defense, aerospace, nuclear industry, modern information industry and other high-tech fields. It plays an important role in the national economy. And preparing high-class ITO powder is crucial to produce high quality transparent electrode material.Based on 4 N indium and tin ingots, precipitation reagent ammonia (25% wt) added in drops, indium tin oxide (ITO) nanopowder synthesized by liquid chemical precipitation is studied. The effects of concentration of indium ion, reaction temperature, pH of reaction end and aging time of precursor on the size of ITO powder was investigated. It was characterized by X-ray diffraction (XRD), differential thermal analysis, thermogravimetric analysis (DTA-TG), transmission electron microscopy (TEM), field-emission scanning electron microscope(SEM), Infrared Spectrum(FT-IR) etc.. When the weight of added sodium silicate is 1%, the reaction temperature is 60℃, the pH value for the end of reaction is 8, aging time is 2 hour, calcining system is 4 hour and 800℃, ITO powder was prepared, which is a spherical, uniform particles, size in 20～40 nm, and it has cubic crystal structure and good dispersibility. Compared with previous methods, it exhibits advantages in simple source of raw materials, improvement in precipitation conditions and more moderate conditions, simple equipment, less pollution, low cost, high-quality products, and it studied a new process line of synthesis ITO nanopowder.
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