Single Event Upset Study Of Space Microelectronic Devices

The Single Event Effect (SEE) of space microelectronic devices has been studied. The rate of Single Event Upset (SEU) for space-based missions has been predicted by means of ground-based particle accelerator test and simulation calculation based on models of space radiation environment and the interaction of ions with the microelectronic device.The space energetic particle environment inducing SEU includes galactic cosmic ray, solar cosmic ray and high-energy trapped protons and heavy ions. These particles have enough energy and can deposit energy and generate charge in the Sensitive Volume (SV) of device. When the charge deposited in the SV exceed critical charge Qc, SEU occurs.In order to decrease intensity of beams, heavy ions generated by tandem accelerator, bombards an Au foil. Scattered ions from the Au foil passing through the Q3D Magnetic Spectrometer, recoiled Au ions were deflected, pure ions with single energy and single Linear Energy Transfer were obtained. Space used microelectronic devices irradiated by the ions, the curves of SEU cross section of the devices versus LET (Linear Energy Transition) were measured. The SEU rates caused by heavy ions and protons in space have been estimated by program calculation based on the test data, the selected environment and ion-device interaction models and the orbit, considering particles transport and shielding and the flux of particles pass shielding.This paper also put forward further thinking about study of SEU, so as to improve the precision of the predicted SEU rate.