Electronic Ballast Driver Ic Ir2155 Reverse Profiling

High voltage IC and smart power IC is the main branch of power IC. It is the result of the combination of microelectronics and power electronics. HVIC makes it possible to fabricate high voltage devices and low voltage control circuit in one chip. It also makes power IC simpler and the price, weight and volume of power IC decrease. It can be used in many fields, for example, space navigation, industry and daily consumption, such as telecommunication, remote control, display driver and automobile. It is based on the development of the technology of high voltage devices, high voltage IC and design technics. This paper discusses many kinds of device, isolation technics and design method in HVIC. The 1R2 155 is a high voltage, high speed, self-oscillating power MOSFET AND IGBT driver with both high and low side referenced output channels. Proprietary IIVIC and latch immune CMOS technology enable reggedized monolithic construction. It has floating channel and floating supply in high side reference channel. The maximun voltage is up to 600 volts. It can be used in high frequency switch power supply, AC and DC electromotor driver, high frequency convetor and especially in blaster. This paper analysis the internal circuits based on reverse engineering and computer simulation. Then give the possible process and internal high voltage device structure. The process technology of this chip is not a standard one, so we can get technology files from demestic fabrication factory. We edit the technology files for verificaton of the layout in Cadence environment.