Research And Design Of Silicon-based Millimeter Wave Ka-band Full-rf Phased-array Receiver Front-end

Millimeter-wave has attracted many applications in the field of wireless communications due to its wide bandwidth,less interference and high directivity,such as radar,sensors and wireless LANs,etc.In particular,the application and research of millimeter-wave circuits in the Ka-band near 30 GHz has received increasing attention from academia and industry.Silicon-based CMOS process due to its high integration and low production costs,with the progress of the generation of generation,in the millimeter-wave circuit design is also increasingly used.However,the discovery of spectrum resources,one day will come to an end,we can use the spatial method to improve the data rate.Phased array systems are widely used in radar and communication systems for beamforming and scanning.The relative phase of the received or transmitted signal is controlled by the phased array system,directing the effective radiation pattern of the antenna array to a particular direction,enhancing the signal in the desired direction and suppressing the signal in an undesired direction.Based on the IBM 0.13μm CMOS process,this paper designs a four-channel phased array receiver front-end circuit with a full RF structure in the Ka-band(27.5 GHz to 28.5 GHz).The main work involved:1.A low-noise amplifier operating in Ka-band at 27 GHz to 29 GHz is designed.The amplifier structure is a two-stage single-ended cascode structure and uses the source negative feedback inductor for input matching.The gain performance was improved by using a common gate cascade coplanar waveguide instead of an inductor as a current reuse technique.At the TT corner,the peak gain at room temperature S21=23dB,the minimum NF = 4.8dB,over the operating band S11<-10 dB,S22<-10 dB,S12<-45dB.2.A 4-bit millimeter-wave passive phase shifter operating at 27 GHz to 28.5 GHz is designed.The II-type low-pass network in the LC-switch structure is used as the design basis.22.5 degrees,45 degrees,90 Degree and 180 degrees are designed for four basic phase shifters.The four basic phase shifter units can be connected in series from 0 to 360 degrees with a resolution of 22.5 degrees.At the middle frequency,27.5GHz,RMS insertion loss is 1.5dB,less than 1.8dB over the entire frequency band;RMS phase error over the entire operating frequency band is less than 11 degrees.3.A two-stage 4:1 on chip Wilkinson power combiner was designed,in which the transmission line used an on-chip coplanar waveguide,using the top layer metal to reduce the loss,and using the electromagnetic field simulation tool to extract the electromagnetic field parameters for post-simulation.4.A single element front-end phase-controlled unit operating at 27.5 GHz to 28.5GHz is designed,including a low noise amplifier,a 4-bit passive phase shifter,and a gain compensation amplifier.RMS gain error is 2dB at the middle frequency and less than 3 dB over the entire operating frequency band.RMS phase error over the entire operating frequency band is less than 15 degrees.This chip has typed out.On the basis of this single element phased-control unit,the phased-array receiving front-end circuit of the full-RF structure operating at 27.5GHz-28.5GHz in Ka-band is designed.The four-channel receiving front-end is signaled by the Wilkinson combiner.Four channels have good phase and gain consistency.