On-state Properties Of Power Semiconductor And Its Research About Temperature Characterisitic

Pulsed power technology is the basic technology of electromagnetic launch. Its role is to provide high-capacity, high-voltage, high current and high energy density of power to launch platform. At present, the development trend of pulsed power technology is miniaturization and modularization. As an important part of pulsed power technology, high-power semiconductor devices are working surge in pulse discharge environment, the main references at this time are no longer under its usual technical parameters, but its surge environment technical parameters. The systematic research is about the characteristic of pluse for high power semiconductor. The main works are as fellows:First, introduced on the basic concept of experimental equipment and technical characteristics. By means of theoretical analysis the theory of high-power semiconductor devices in pulse forming network features, extended the equation of state under normal circumstances, this leads to the study of high-power semiconductor devices.Secondly, select SCR as the representative to high power semiconductor, research its mechanism and its on-dynamic parameters of the mutual impact in theory. Analyse high power SCR which surge in the discharge environment sustainability from semiconductor physics.Then, in the discharge of pulsed power source, test the large current pulse, the dynamic parameters of high-power semiconductor devices. Analyse their experimental data in the pulse of the dynamic environment.Finally, analyse the failure modes and common stress of high-power semiconductor devices, research its temperature characterisitic in pulsed power source system environment. Through this dissertation, a research has been made on the high-power semiconductor devices in the discharge pulse surge to the dynamic nature of the environment and temperature characteristics of the system, which has a guiding significance on the design of pulsed power supply module.